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STMicroelectronics STP11N65M5

STP11N65M5


  • Manufacturer: Brady Corporation
  • Chip 1 Group NO: STP11N65M5
  • Price: $2.07
  • Datasheet: PDF
  • Description: STP11N65M5(Kg)
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Details

Tags

Parameters
Mfr STMicroelectronics
Series MDmesh™ V
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 480mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 644 pF @ 100 V
FET Feature -
Power Dissipation (Max) 85W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
Base Product Number STP11
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 50
N-Channel 650 V 9A (Tc) 85W (Tc) Through Hole TO-220