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STMicroelectronics STP25N10F7

STP25N10F7


  • Manufacturer: Brady Corporation
  • Chip 1 Group NO: STP25N10F7
  • Price: $1.43
  • Datasheet: PDF
  • Description: STP25N10F7(Kg)
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Details

Tags

Parameters
Mfr STMicroelectronics
Series DeepGATE™, STripFET™ VII
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 35mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 920 pF @ 50 V
FET Feature -
Power Dissipation (Max) 50W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
Base Product Number STP25
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 50
N-Channel 100 V 25A (Tc) 50W (Tc) Through Hole TO-220