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STMicroelectronics STP26NM60ND

STP26NM60ND


  • Manufacturer: Brady Corporation
  • Chip 1 Group NO: STP26NM60ND
  • Price:
  • Datasheet: PDF
  • Description: STP26NM60ND(Kg)
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Details

Tags

Parameters
Mfr STMicroelectronics
Series FDmesh™ II
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 175mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 54.6 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 1817 pF @ 100 V
FET Feature -
Power Dissipation (Max) 190W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
Base Product Number STP26N
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 50
N-Channel 600 V 21A (Tc) 190W (Tc) Through Hole TO-220