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STMicroelectronics STW30NM60D

STW30NM60D


  • Manufacturer: Brady Corporation
  • Chip 1 Group NO: STW30NM60D
  • Price:
  • Datasheet: PDF
  • Description: STW30NM60D(Kg)
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Details

Tags

Parameters
Mfr STMicroelectronics
Series MDmesh™
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 145mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 115 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2520 pF @ 25 V
FET Feature -
Power Dissipation (Max) 312W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package / Case TO-247-3
Base Product Number STW30N
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 497-4426-5
Standard Package 30
N-Channel 600 V 30A (Tc) 312W (Tc) Through Hole TO-247-3