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STMicroelectronics STW35N60M2-EP

STW35N60M2-EP


  • Manufacturer: Brady Corporation
  • Chip 1 Group NO: STW35N60M2-EP
  • Price:
  • Datasheet: -
  • Description: STW35N60M2-EP(Kg)
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Details

Tags

Parameters
Mfr STMicroelectronics
Series MDmesh™ M2-EP
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On) -
Rds On (Max) @ Id, Vgs -
Vgs(th) (Max) @ Id -
Vgs (Max) -
FET Feature -
Power Dissipation (Max) -
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247
Package / Case TO-247-3
Base Product Number STW35N
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 600
N-Channel 600 V 26A (Tc) Through Hole TO-247