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STMicroelectronics STW6N90K5
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| Parameters | |
|---|---|
| Mfr | STMicroelectronics |
| Series | MDmesh™ K5 |
| Package | Tube |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 900 V |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 1.1Ohm @ 3A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 100µA |
| Vgs (Max) | ±30V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247 |
| Package / Case | TO-247-3 |
| Base Product Number | STW6N90 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Other Names | 497-17077 |
| Standard Package | 30 |
N-Channel 900 V 6A (Tc) 110W (Tc) Through Hole TO-247
