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STMicroelectronics STX112
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| Parameters | |
|---|---|
| Mfr | STMicroelectronics |
| Series | - |
| Package | Bulk |
| Product Status | Obsolete |
| Transistor Type | NPN - Darlington |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Vce Saturation (Max) @ Ib, Ic | 2.5V @ 8mA, 2A |
| Current - Collector Cutoff (Max) | 2mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 1A, 4V |
| Power - Max | 1.2 W |
| Frequency - Transition | - |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Supplier Device Package | TO-92-3 |
| Base Product Number | STX112 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Standard Package | 2,500 |
Bipolar (BJT) Transistor NPN - Darlington 100 V 2 A 1.2 W Through Hole TO-92-3
