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Taiwan Semiconductor Corporation TS13002ACT A3G
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| Parameters | |
|---|---|
| Mfr | Taiwan Semiconductor Corporation |
| Series | - |
| Package | Tape & Box (TB) |
| Product Status | Active |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 300 mA |
| Voltage - Collector Emitter Breakdown (Max) | 400 V |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 20mA, 200mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 100mA, 10V |
| Power - Max | 600 mW |
| Frequency - Transition | 4MHz |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Supplier Device Package | TO-92 |
| Base Product Number | TS13002 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.21.0095 |
| Standard Package | 2,000 |
Bipolar (BJT) Transistor NPN 400 V 300 mA 4MHz 600 mW Through Hole TO-92
