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Taiwan Semiconductor Corporation TSI10H200CW
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| Parameters | |
|---|---|
| Mfr | Taiwan Semiconductor Corporation |
| Series | - |
| Package | Tube |
| Product Status | Obsolete |
| Diode Configuration | 1 Pair Common Cathode |
| Technology | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Current - Average Rectified (Io) (per Diode) | 5A |
| Voltage - Forward (Vf) (Max) @ If | 910 mV @ 5 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Current - Reverse Leakage @ Vr | 100 µA @ 200 V |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Mounting Type | Through Hole |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Supplier Device Package | I2PAK |
| Base Product Number | TSI10 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.10.0080 |
| Standard Package | 2,000 |
Diode Array 1 Pair Common Cathode 200 V 5A Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
