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Taiwan Semiconductor Corporation TSM10N60CI C0G

TSM10N60CI C0G


  • Manufacturer: Watterott Electronic GmbH
  • Chip 1 Group NO: TSM10N60CI C0G
  • Price:
  • Datasheet: PDF
  • Description: TSM10N60CI C0G(Kg)
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Details

Tags

Parameters
Mfr Taiwan Semiconductor Corporation
Series -
Package Bulk
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 750mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 45.8 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1738 pF @ 25 V
FET Feature -
Power Dissipation (Max) 50W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package ITO-220
Package / Case TO-220-3 Full Pack, Isolated Tab
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names TSM10N60CIC0G
Standard Package 1
N-Channel 600 V 10A (Tc) 50W (Tc) Through Hole ITO-220