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Taiwan Semiconductor Corporation TSM250N02DCQ RFG
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| Parameters | |
|---|---|
| Mfr | Taiwan Semiconductor Corporation |
| Series | - |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 5.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 4A, 4.5V |
| Vgs(th) (Max) @ Id | 800mV @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 775pF @ 10V |
| Power - Max | 620mW (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 6-VDFN Exposed Pad |
| Supplier Device Package | 6-TDFN (2x2) |
| Base Product Number | TSM250 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.21.0095 |
| Standard Package | 3,000 |
Mosfet Array 20V 5.8A (Tc) 620mW (Tc) Surface Mount 6-TDFN (2x2)
