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Taiwan Semiconductor Corporation TSM85N10CZ C0G

TSM85N10CZ C0G


  • Manufacturer: Watterott Electronic GmbH
  • Chip 1 Group NO: TSM85N10CZ C0G
  • Price:
  • Datasheet: PDF
  • Description: TSM85N10CZ C0G(Kg)
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Details

Tags

Parameters
Mfr Taiwan Semiconductor Corporation
Series -
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 81A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 10mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 154 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3900 pF @ 30 V
FET Feature -
Power Dissipation (Max) 210W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
Base Product Number TSM85
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 50
N-Channel 100 V 81A (Tc) 210W (Tc) Through Hole TO-220