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Texas Instruments BQ4011MA-200
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| Parameters | |
|---|---|
| Mfr | Texas Instruments |
| Series | - |
| Package | Tube |
| Product Status | Obsolete |
| Memory Type | Non-Volatile |
| Memory Format | NVSRAM |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Size | 256Kbit |
| Memory Organization | 32K x 8 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 200ns |
| Access Time | 200 ns |
| Voltage - Supply | 4.75V ~ 5.5V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Through Hole |
| Package / Case | 28-DIP Module (0.61", 15.49mm) |
| Supplier Device Package | 28-DIP Module (18.42x37.72) |
| Base Product Number | BQ4011 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8542.32.0041 |
| Standard Package | 42 |
NVSRAM (Non-Volatile SRAM) Memory IC 256Kbit Parallel 200 ns 28-DIP Module (18.42x37.72)
