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Texas Instruments CSD13306W
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| Parameters | |
|---|---|
| Vgs(th) (Max) @ Id | 1.3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 11.2 nC @ 4.5 V |
| Vgs (Max) | ±10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1370 pF @ 6 V |
| FET Feature | - |
| Power Dissipation (Max) | 1.9W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 6-DSBGA (1x1.5) |
| Package / Case | 6-UFBGA, DSBGA |
| Base Product Number | CSD13306 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Standard Package | 3,000 |
| Mfr | Texas Instruments |
| Series | NexFET™ |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 12 V |
| Current - Continuous Drain (Id) @ 25°C | 3.5A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Rds On (Max) @ Id, Vgs | 10.2mOhm @ 1.5A, 4.5V |
N-Channel 12 V 3.5A (Ta) 1.9W (Ta) Surface Mount 6-DSBGA (1x1.5)
