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Texas Instruments CSD19538Q2T

CSD19538Q2T


  • Manufacturer: Advanced Linear Devices Inc.
  • Chip 1 Group NO: CSD19538Q2T
  • Price: $1.11
  • Datasheet: PDF
  • Description: CSD19538Q2T(Kg)
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Details

Tags

Parameters
Mfr Texas Instruments
Series NexFET™
Package Tape & Reel (TR)
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 13.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 59mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5.6 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 454 pF @ 50 V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 20.2W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-WSON (2x2)
Package / Case 6-WDFN Exposed Pad
Base Product Number CSD19538
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 250
N-Channel 100 V 13.1A (Tc) 2.5W (Ta), 20.2W (Tc) Surface Mount 6-WSON (2x2)