Parameters | |
---|---|
Mfr | Texas Instruments |
Series | NexFET™ |
Package | Tape & Reel (TR) |
Product Status | Active |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 8 V |
Current - Continuous Drain (Id) @ 25°C | 5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs | 5.7mOhm @ 2A, 4.5V |
Vgs(th) (Max) @ Id | 1.05V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 14.6 nC @ 4.5 V |
Vgs (Max) | -6V |
Input Capacitance (Ciss) (Max) @ Vds | 2275 pF @ 4 V |
FET Feature | - |
Power Dissipation (Max) | 1.7W (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 9-DSBGA |
Package / Case | 9-UFBGA, DSBGA |
Base Product Number | CSD22206 |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
REACH Status | REACH Unaffected |
ECCN | EAR99 |
HTSUS | 8541.29.0095 |
Standard Package | 250 |