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Texas Instruments CSD75207W15
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| Parameters | |
|---|---|
| Mfr | Texas Instruments |
| Series | NexFET™ |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 P-Channel (Dual) Common Source |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | - |
| Current - Continuous Drain (Id) @ 25°C | 3.9A |
| Rds On (Max) @ Id, Vgs | 162mOhm @ 1A, 1.8V |
| Vgs(th) (Max) @ Id | 1.1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 3.7nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 595pF @ 10V |
| Power - Max | 700mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 9-UFBGA, DSBGA |
| Supplier Device Package | 9-DSBGA |
| Base Product Number | CSD75207 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.21.0095 |
| Standard Package | 3,000 |
Mosfet Array 3.9A 700mW Surface Mount 9-DSBGA
