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Texas Instruments CSD86330Q3D
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| Parameters | |
|---|---|
| Mfr | Texas Instruments |
| Series | NexFET™ |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Half Bridge) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 20A |
| Rds On (Max) @ Id, Vgs | 9.6mOhm @ 14A, 8V |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 6.2nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 920pF @ 12.5V |
| Power - Max | 6W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerLDFN |
| Supplier Device Package | 8-LSON (3.3x3.3) |
| Base Product Number | CSD86330Q3 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Affected |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Standard Package | 2,500 |
Mosfet Array 25V 20A 6W Surface Mount 8-LSON (3.3x3.3)
