Parameters |
Mfr |
Texas Instruments |
Series |
NexFET™ |
Package |
Tape & Reel (TR) |
Product Status |
Active |
Technology |
MOSFET (Metal Oxide) |
Configuration |
2 N-Channel (Half Bridge) |
FET Feature |
Logic Level Gate, 5V Drive |
Drain to Source Voltage (Vdss) |
25V |
Current - Continuous Drain (Id) @ 25°C |
20A (Ta) |
Rds On (Max) @ Id, Vgs |
9.1mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V |
Vgs(th) (Max) @ Id |
1.9V @ 250µA, 1.6V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
3.8nC @ 45V, 7.4nC @ 45V |
Input Capacitance (Ciss) (Max) @ Vds |
494pF @ 12.5V, 970pF @ 12.5V |
Power - Max |
6W |
Operating Temperature |
-55°C ~ 125°C |
Mounting Type |
Surface Mount |
Package / Case |
8-PowerTDFN |
Supplier Device Package |
8-VSON (3.3x3.3) |
Base Product Number |
CSD86336Q3 |
RoHS Status |
ROHS3 Compliant |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Standard Package |
250 |
Mosfet Array 25V 20A (Ta) 6W Surface Mount 8-VSON (3.3x3.3)