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Toshiba Semiconductor and Storage 2SA1680(T6DNSO,F,M
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| Parameters | |
|---|---|
| Mfr | Toshiba Semiconductor and Storage |
| Series | - |
| Package | Bulk |
| Product Status | Obsolete |
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 1A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 100mA, 2V |
| Power - Max | 900 mW |
| Frequency - Transition | 100MHz |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Supplier Device Package | TO-92MOD |
| Base Product Number | 2SA1680 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN | EAR99 |
| HTSUS | 8541.21.0075 |
| Standard Package | 1 |
Bipolar (BJT) Transistor PNP 50 V 2 A 100MHz 900 mW Through Hole TO-92MOD
