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Toshiba Semiconductor and Storage 2SA1680(T6DNSO,F,M

2SA1680(T6DNSO,F,M


  • Manufacturer: Nidec Copal Electronics
  • Chip 1 Group NO: 2SA1680(T6DNSO,F,M
  • Price:
  • Datasheet: PDF
  • Description: 2SA1680(T6DNSO,F,M(Kg)
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Details

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Parameters
Mfr Toshiba Semiconductor and Storage
Series -
Package Bulk
Product Status Obsolete
Transistor Type PNP
Current - Collector (Ic) (Max) 2 A
Voltage - Collector Emitter Breakdown (Max) 50 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 1A
Current - Collector Cutoff (Max) 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 100mA, 2V
Power - Max 900 mW
Frequency - Transition 100MHz
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Long Body
Supplier Device Package TO-92MOD
Base Product Number 2SA1680
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0075
Standard Package 1
Bipolar (BJT) Transistor PNP 50 V 2 A 100MHz 900 mW Through Hole TO-92MOD