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Toshiba Semiconductor and Storage 2SA949-Y(T6JVC1,FM
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| Parameters | |
|---|---|
| Mfr | Toshiba Semiconductor and Storage |
| Series | - |
| Package | Bulk |
| Product Status | Obsolete |
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 50 mA |
| Voltage - Collector Emitter Breakdown (Max) | 150 V |
| Vce Saturation (Max) @ Ib, Ic | 800mV @ 1mA, 10A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 10mA, 5V |
| Power - Max | 800 mW |
| Frequency - Transition | 120MHz |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Supplier Device Package | TO-92MOD |
| Base Product Number | 2SA949 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN | EAR99 |
| HTSUS | 8541.21.0075 |
| Standard Package | 1 |
Bipolar (BJT) Transistor PNP 150 V 50 mA 120MHz 800 mW Through Hole TO-92MOD
