Parameters |
Mfr |
Toshiba Semiconductor and Storage |
Series |
- |
Package |
Tape & Reel (TR) |
Product Status |
Active |
Transistor Type |
NPN |
Current - Collector (Ic) (Max) |
100 mA |
Voltage - Collector Emitter Breakdown (Max) |
120 V |
Vce Saturation (Max) @ Ib, Ic |
300mV @ 1mA, 10mA |
Current - Collector Cutoff (Max) |
100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce |
200 @ 2mA, 6V |
Power - Max |
150 mW |
Frequency - Transition |
100MHz |
Operating Temperature |
125°C (TJ) |
Mounting Type |
Surface Mount |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package |
TO-236 |
Base Product Number |
2SC2713 |
RoHS Status |
ROHS3 Compliant |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN |
EAR99 |
HTSUS |
8541.21.0075 |
Standard Package |
3,000 |
Bipolar (BJT) Transistor NPN 120 V 100 mA 100MHz 150 mW Surface Mount TO-236