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Toshiba Semiconductor and Storage 2SC4793,F(J
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| Parameters | |
|---|---|
| Mfr | Toshiba Semiconductor and Storage |
| Series | - |
| Package | Bulk |
| Product Status | Obsolete |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 230 V |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA, 5V |
| Power - Max | 2 W |
| Frequency - Transition | 100MHz |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack |
| Supplier Device Package | TO-220NIS |
| Base Product Number | 2SC4793 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN | EAR99 |
| HTSUS | 8541.29.0075 |
| Standard Package | 1 |
Bipolar (BJT) Transistor NPN 230 V 1 A 100MHz 2 W Through Hole TO-220NIS
