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Toshiba Semiconductor and Storage RN2106CT(TPL3)
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| Parameters | |
|---|---|
| Mfr | Toshiba Semiconductor and Storage |
| Series | - |
| Package | Tape & Reel (TR) |
| Product Status | Obsolete |
| Transistor Type | PNP - Pre-Biased |
| Current - Collector (Ic) (Max) | 50 mA |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 10mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 500nA |
| Power - Max | 50 mW |
| Mounting Type | Surface Mount |
| Package / Case | SC-101, SOT-883 |
| Supplier Device Package | CST3 |
| Base Product Number | RN2106 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN | EAR99 |
| HTSUS | 8541.21.0095 |
| Standard Package | 10,000 |
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 20 V 50 mA 50 mW Surface Mount CST3
