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Toshiba Semiconductor and Storage SSM3J15CT(TPL3)
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| Parameters | |
|---|---|
| Mfr | Toshiba Semiconductor and Storage |
| Series | π-MOSVI |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 100mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4V |
| Rds On (Max) @ Id, Vgs | 12Ohm @ 10mA, 4V |
| Vgs(th) (Max) @ Id | - |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 9.1 pF @ 3 V |
| FET Feature | - |
| Power Dissipation (Max) | 100mW (Ta) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | CST3 |
| Package / Case | SC-101, SOT-883 |
| Base Product Number | SSM3J15 |
| RoHS Status | RoHS Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN | EAR99 |
| HTSUS | 8541.21.0095 |
| Standard Package | 10,000 |
P-Channel 30 V 100mA (Ta) 100mW (Ta) Surface Mount CST3
