Parameters | |
---|---|
Mfr | Toshiba Semiconductor and Storage |
Series | - |
Package | Tape & Reel (TR) |
Product Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20 V |
Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4V |
Rds On (Max) @ Id, Vgs | 55mOhm @ 2A, 4V |
Vgs(th) (Max) @ Id | 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 5.9 nC @ 4 V |
Vgs (Max) | ±10V |
Input Capacitance (Ciss) (Max) @ Vds | 400 pF @ 10 V |
FET Feature | - |
Power Dissipation (Max) | 500mW (Ta) |
Operating Temperature | 150°C |
Mounting Type | Surface Mount |
Supplier Device Package | UF6 |
Package / Case | 6-SMD, Flat Leads |
Base Product Number | SSM6K404 |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
ECCN | EAR99 |
HTSUS | 8541.21.0095 |
Standard Package | 3,000 |