Parameters |
Mfr |
Toshiba Semiconductor and Storage |
Series |
- |
Package |
Tape & Reel (TR) |
Product Status |
Active |
Technology |
MOSFET (Metal Oxide) |
Configuration |
2 N-Channel (Dual) |
FET Feature |
- |
Drain to Source Voltage (Vdss) |
60V |
Current - Continuous Drain (Id) @ 25°C |
300mA |
Rds On (Max) @ Id, Vgs |
1.5Ohm @ 100mA, 10V |
Vgs(th) (Max) @ Id |
2.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
0.6nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds |
40pF @ 10V |
Power - Max |
285mW |
Operating Temperature |
150°C (TJ) |
Mounting Type |
Surface Mount |
Package / Case |
6-TSSOP, SC-88, SOT-363 |
Supplier Device Package |
US6 |
Base Product Number |
SSM6N7002 |
RoHS Status |
ROHS3 Compliant |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN |
EAR99 |
HTSUS |
8541.21.0095 |
Standard Package |
3,000 |
Mosfet Array 60V 300mA 285mW Surface Mount US6