Parameters |
Mfr |
Toshiba Semiconductor and Storage |
Series |
DTMOSIV |
Package |
Tube |
Product Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
800 V |
Current - Continuous Drain (Id) @ 25°C |
17A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Rds On (Max) @ Id, Vgs |
290mOhm @ 8.5A, 10V |
Vgs(th) (Max) @ Id |
4V @ 850µA |
Gate Charge (Qg) (Max) @ Vgs |
32 nC @ 10 V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
2050 pF @ 300 V |
FET Feature |
- |
Power Dissipation (Max) |
45W (Tc) |
Operating Temperature |
150°C |
Mounting Type |
Through Hole |
Supplier Device Package |
TO-220SIS |
Package / Case |
TO-220-3 Full Pack |
Base Product Number |
TK17A80 |
RoHS Status |
ROHS3 Compliant |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Standard Package |
50 |
N-Channel 800 V 17A (Ta) 45W (Tc) Through Hole TO-220SIS