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Toshiba Semiconductor and Storage TK35N65W,S1F
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| Parameters | |
|---|---|
| Mfr | Toshiba Semiconductor and Storage |
| Series | DTMOSIV |
| Package | Tube |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 35A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 17.5A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 2.1mA |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 4100 pF @ 300 V |
| FET Feature | - |
| Power Dissipation (Max) | 270W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247 |
| Package / Case | TO-247-3 |
| Base Product Number | TK35N65 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Standard Package | 30 |
N-Channel 650 V 35A (Ta) 270W (Tc) Through Hole TO-247
