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Toshiba Semiconductor and Storage TLP109(IGM,E)
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| Parameters | |
|---|---|
| Mfr | Toshiba Semiconductor and Storage |
| Series | - |
| Package | Tube |
| Product Status | Active |
| Number of Channels | 1 |
| Voltage - Isolation | 3750Vrms |
| Current Transfer Ratio (Min) | 25% @ 10mA |
| Current Transfer Ratio (Max) | 75% @ 10mA |
| Turn On / Turn Off Time (Typ) | 450ns, 450ns |
| Rise / Fall Time (Typ) | - |
| Input Type | DC |
| Output Type | Transistor |
| Voltage - Output (Max) | 20V |
| Current - Output / Channel | 8mA |
| Voltage - Forward (Vf) (Typ) | 1.64V |
| Current - DC Forward (If) (Max) | 20 mA |
| Vce Saturation (Max) | - |
| Operating Temperature | -55°C ~ 125°C |
| Mounting Type | Surface Mount |
| Package / Case | 6-SOIC (0.179", 4.55mm Width), 5 Leads |
| Supplier Device Package | 6-SO, 5 Lead |
| Base Product Number | TLP109 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN | EAR99 |
| HTSUS | 8541.49.8000 |
| Standard Package | 125 |
Optoisolator Transistor Output 3750Vrms 1 Channel 6-SO, 5 Lead
