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Toshiba Semiconductor and Storage TPC8109(TE12L)
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| Parameters | |
|---|---|
| HTSUS | 8541.29.0095 |
| Standard Package | 3,000 |
| Mfr | Toshiba Semiconductor and Storage |
| Series | - |
| Package | Cut Tape (CT) |
| Product Status | Obsolete |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 5A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2260 pF @ 10 V |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SOP (5.5x6.0) |
| Package / Case | 8-SOIC (0.173", 4.40mm Width) |
| Base Product Number | TPC8109 |
| RoHS Status | RoHS non-compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN | EAR99 |
P-Channel 30 V 10A (Ta) Surface Mount 8-SOP (5.5x6.0)
