Parameters | |
---|---|
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Base Product Number | TPC8125 |
RoHS Status | RoHS Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
ECCN | EAR99 |
HTSUS | 8541.29.0095 |
Standard Package | 2,500 |
Mfr | Toshiba Semiconductor and Storage |
Series | U-MOSVI |
Package | Tape & Reel (TR) |
Product Status | Active |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30 V |
Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 13mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id | 2V @ 500µA |
Gate Charge (Qg) (Max) @ Vgs | 64 nC @ 10 V |
Vgs (Max) | +20V, -25V |
Input Capacitance (Ciss) (Max) @ Vds | 2580 pF @ 10 V |
FET Feature | - |
Power Dissipation (Max) | 1W (Ta) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SOP |