Parameters |
Mfr |
Toshiba Semiconductor and Storage |
Series |
U-MOSIV-H |
Package |
Cut Tape (CT) |
Product Status |
Obsolete |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
30 V |
Current - Continuous Drain (Id) @ 25°C |
50A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
Rds On (Max) @ Id, Vgs |
2.8mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id |
2.3V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs |
88 nC @ 10 V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
7800 pF @ 10 V |
FET Feature |
- |
Power Dissipation (Max) |
1.6W (Ta), 45W (Tc) |
Operating Temperature |
150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
8-SOP Advance (5x5) |
Package / Case |
8-PowerVDFN |
Base Product Number |
TPCA8028 |
RoHS Status |
RoHS Compliant |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Standard Package |
3,000 |
N-Channel 30 V 50A (Ta) 1.6W (Ta), 45W (Tc) Surface Mount 8-SOP Advance (5x5)