Parameters |
Mfr |
Toshiba Semiconductor and Storage |
Series |
- |
Package |
Tape & Reel (TR) |
Product Status |
Obsolete |
FET Type |
P-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
12 V |
Current - Continuous Drain (Id) @ 25°C |
6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) |
1.8V, 4.5V |
Rds On (Max) @ Id, Vgs |
33mOhm @ 3A, 4.5V |
Vgs(th) (Max) @ Id |
1.2V @ 200µA |
Gate Charge (Qg) (Max) @ Vgs |
18 nC @ 5 V |
Vgs (Max) |
±8V |
Input Capacitance (Ciss) (Max) @ Vds |
1600 pF @ 10 V |
FET Feature |
- |
Power Dissipation (Max) |
1.6W (Ta), 20W (Tc) |
Operating Temperature |
150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
8-SOP Advance (5x5) |
Package / Case |
8-PowerVDFN |
Base Product Number |
TPCA8105 |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Standard Package |
3,000 |
P-Channel 12 V 6A (Ta) 1.6W (Ta), 20W (Tc) Surface Mount 8-SOP Advance (5x5)