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Toshiba Semiconductor and Storage TPN2R304PL,L1Q
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| Parameters | |
|---|---|
| Mfr | Toshiba Semiconductor and Storage |
| Series | U-MOSIX-H |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 2.3mOhm @ 40A, 10V |
| Vgs(th) (Max) @ Id | 2.4V @ 300µA |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 3600 pF @ 20 V |
| FET Feature | - |
| Power Dissipation (Max) | 630mW (Ta), 104W (Tc) |
| Operating Temperature | 175°C |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-TSON Advance (3.1x3.1) |
| Package / Case | 8-PowerVDFN |
| Base Product Number | TPN2R304 |
| RoHS Status | RoHS Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Standard Package | 5,000 |
N-Channel 40 V 80A (Tc) 630mW (Ta), 104W (Tc) Surface Mount 8-TSON Advance (3.1x3.1)
