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Toshiba Semiconductor and Storage TPN4R712MD,L1Q

TPN4R712MD,L1Q


  • Manufacturer: Nidec Copal Electronics
  • Chip 1 Group NO: TPN4R712MD,L1Q
  • Price: $0.85
  • Datasheet: PDF
  • Description: TPN4R712MD,L1Q(Kg)
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Details

Tags

Parameters
Rds On (Max) @ Id, Vgs 4.7mOhm @ 18A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 65 nC @ 5 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 4300 pF @ 10 V
FET Feature -
Power Dissipation (Max) 42W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-TSON Advance (3.1x3.1)
Package / Case 8-PowerVDFN
Base Product Number TPN4R712
RoHS Status RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 5,000
Mfr Toshiba Semiconductor and Storage
Series U-MOSVI
Package Tape & Reel (TR)
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
P-Channel 20 V 36A (Tc) 42W (Tc) Surface Mount 8-TSON Advance (3.1x3.1)