Parameters |
Mfr |
Toshiba Semiconductor and Storage |
Series |
U-MOSVIII-H |
Package |
Tape & Reel (TR) |
Product Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
150 V |
Current - Continuous Drain (Id) @ 25°C |
9A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Rds On (Max) @ Id, Vgs |
59mOhm @ 4.5A, 10V |
Vgs(th) (Max) @ Id |
4V @ 200µA |
Gate Charge (Qg) (Max) @ Vgs |
7 nC @ 10 V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
600 pF @ 75 V |
FET Feature |
- |
Power Dissipation (Max) |
700mW (Ta), 39W (Tc) |
Operating Temperature |
150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
8-TSON Advance (3.1x3.1) |
Package / Case |
8-PowerVDFN |
Base Product Number |
TPN5900 |
RoHS Status |
RoHS Compliant |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Standard Package |
5,000 |
N-Channel 150 V 9A (Ta) 700mW (Ta), 39W (Tc) Surface Mount 8-TSON Advance (3.1x3.1)