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Vishay General Semiconductor - Diodes Division 1N5822-E3/54
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| Parameters | |
|---|---|
| Mfr | Vishay General Semiconductor - Diodes Division |
| Series | - |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Technology | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 40 V |
| Current - Average Rectified (Io) | 3A |
| Voltage - Forward (Vf) (Max) @ If | 525 mV @ 3 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Current - Reverse Leakage @ Vr | 2 mA @ 40 V |
| Capacitance @ Vr, F | - |
| Mounting Type | Through Hole |
| Package / Case | DO-201AD, Axial |
| Supplier Device Package | DO-201AD |
| Operating Temperature - Junction | -65°C ~ 125°C |
| Base Product Number | 1N5822 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.10.0080 |
| Standard Package | 1,400 |
Diode 40 V 3A Through Hole DO-201AD
