Parameters |
Mfr |
Vishay General Semiconductor - Diodes Division |
Series |
- |
Package |
Bulk |
Product Status |
Obsolete |
Transistor Type |
NPN |
Current - Collector (Ic) (Max) |
200 mA |
Voltage - Collector Emitter Breakdown (Max) |
40 V |
Vce Saturation (Max) @ Ib, Ic |
300mV @ 5mA, 50mA |
Current - Collector Cutoff (Max) |
- |
DC Current Gain (hFE) (Min) @ Ic, Vce |
100 @ 10mA, 1V |
Power - Max |
625 mW |
Frequency - Transition |
300MHz |
Operating Temperature |
- |
Mounting Type |
Through Hole |
Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package |
TO-92-3 |
Base Product Number |
2N3904 |
RoHS Status |
ROHS3 Compliant |
Moisture Sensitivity Level (MSL) |
Not Applicable |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
8541.21.0075 |
Standard Package |
1,000 |
Bipolar (BJT) Transistor NPN 40 V 200 mA 300MHz 625 mW Through Hole TO-92-3