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Vishay General Semiconductor - Diodes Division 3N259-E4/45
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| Parameters | |
|---|---|
| Mfr | Vishay General Semiconductor - Diodes Division |
| Series | - |
| Package | Tube |
| Product Status | Obsolete |
| Diode Type | Single Phase |
| Technology | Standard |
| Voltage - Peak Reverse (Max) | 1 kV |
| Current - Average Rectified (Io) | 2 A |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 3.14 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 1000 V |
| Operating Temperature | -55°C ~ 165°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | 4-SIP, KBPM |
| Supplier Device Package | KBPM |
| Base Product Number | 3N259 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.10.0080 |
| Standard Package | 30 |
Bridge Rectifier Single Phase Standard 1 kV Through Hole KBPM
