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Vishay General Semiconductor - Diodes Division 50MT060WH
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| Parameters | |
|---|---|
| Mfr | Vishay General Semiconductor - Diodes Division |
| Series | - |
| Product Status | Obsolete |
| IGBT Type | PT |
| Configuration | Half Bridge |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector (Ic) (Max) | 114 A |
| Power - Max | 658 W |
| Vce(on) (Max) @ Vge, Ic | 3.2V @ 15V, 100A |
| Current - Collector Cutoff (Max) | 400 µA |
| Input Capacitance (Cies) @ Vce | 7.1 nF @ 30 V |
| Input | Standard |
| NTC Thermistor | No |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | 12-MTP Module |
| Supplier Device Package | 12-MTP |
| Base Product Number | 50MT060 |
| RoHS Status | RoHS non-compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Standard Package | 15 |
IGBT Module PT Half Bridge 600 V 114 A 658 W Chassis Mount 12-MTP
