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Vishay General Semiconductor - Diodes Division B125C800DM-E3/45
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| Parameters | |
|---|---|
| Standard Package | 5,000 |
| Mfr | Vishay General Semiconductor - Diodes Division |
| Series | - |
| Package | Tube |
| Product Status | Active |
| Diode Type | Single Phase |
| Technology | Standard |
| Voltage - Peak Reverse (Max) | 200 V |
| Current - Average Rectified (Io) | 900 mA |
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 900 mA |
| Current - Reverse Leakage @ Vr | 10 µA @ 200 V |
| Operating Temperature | -40°C ~ 125°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | 4-EDIP (0.300", 7.62mm) |
| Supplier Device Package | DFM |
| Base Product Number | B125 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.10.0080 |
Bridge Rectifier Single Phase Standard 200 V Through Hole DFM
