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Vishay General Semiconductor - Diodes Division BYG10M-M3/TR
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| Parameters | |
|---|---|
| Mfr | Vishay General Semiconductor - Diodes Division |
| Series | - |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Technology | Avalanche |
| Voltage - DC Reverse (Vr) (Max) | 1000 V |
| Current - Average Rectified (Io) | 1.5A |
| Voltage - Forward (Vf) (Max) @ If | 1.15 V @ 1.5 A |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 4 µs |
| Current - Reverse Leakage @ Vr | 1 µA @ 1000 V |
| Capacitance @ Vr, F | - |
| Mounting Type | Surface Mount |
| Package / Case | DO-214AC, SMA |
| Supplier Device Package | DO-214AC (SMA) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Base Product Number | BYG10 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.10.0080 |
| Standard Package | 1,800 |
Diode 1000 V 1.5A Surface Mount DO-214AC (SMA)
