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Vishay General Semiconductor - Diodes Division BYT51J-TAP
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| Parameters | |
|---|---|
| Mfr | Vishay General Semiconductor - Diodes Division |
| Series | - |
| Package | Tape & Box (TB) |
| Product Status | Active |
| Technology | Avalanche |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Current - Average Rectified (Io) | 1.5A |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 1 A |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 4 µs |
| Current - Reverse Leakage @ Vr | 1 µA @ 600 V |
| Capacitance @ Vr, F | - |
| Mounting Type | Through Hole |
| Package / Case | SOD-57, Axial |
| Supplier Device Package | SOD-57 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Base Product Number | BYT51 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.10.0080 |
| Standard Package | 25,000 |
Diode 600 V 1.5A Through Hole SOD-57
