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Vishay General Semiconductor - Diodes Division FB180SA10
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| Parameters | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 108A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 380 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 10700 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 480W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Supplier Device Package | SOT-227 |
| Package / Case | SOT-227-4, miniBLOC |
| Base Product Number | FB180 |
| RoHS Status | RoHS non-compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Standard Package | 10 |
| Mfr | Vishay General Semiconductor - Diodes Division |
| Series | HEXFET® |
| Package | Tube |
| Product Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
N-Channel 100 V 180A (Tc) 480W (Tc) Chassis Mount SOT-227
