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Vishay General Semiconductor - Diodes Division V20120SG-E3/4W

V20120SG-E3/4W


  • Manufacturer: AK-Nord GmbH
  • Chip 1 Group NO: V20120SG-E3/4W
  • Price: $0.63
  • Datasheet: PDF
  • Description: V20120SG-E3/4W(Kg)
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Details

Tags

Parameters
Mfr Vishay General Semiconductor - Diodes Division
Series TMBS®
Package Tube
Product Status Active
Technology Schottky
Voltage - DC Reverse (Vr) (Max) 120 V
Current - Average Rectified (Io) 20A
Voltage - Forward (Vf) (Max) @ If 1.33 V @ 20 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr 250 µA @ 120 V
Capacitance @ Vr, F -
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Operating Temperature - Junction -40°C ~ 150°C
Base Product Number V20120
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0080
Other Names V20120SG-E3/4WGI
Standard Package 1,000
Diode 120 V 20A Through Hole TO-220-3