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Vishay General Semiconductor - Diodes Division V20120SG-E3/4W
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| Parameters | |
|---|---|
| Mfr | Vishay General Semiconductor - Diodes Division |
| Series | TMBS® |
| Package | Tube |
| Product Status | Active |
| Technology | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 120 V |
| Current - Average Rectified (Io) | 20A |
| Voltage - Forward (Vf) (Max) @ If | 1.33 V @ 20 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Current - Reverse Leakage @ Vr | 250 µA @ 120 V |
| Capacitance @ Vr, F | - |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Supplier Device Package | TO-220-3 |
| Operating Temperature - Junction | -40°C ~ 150°C |
| Base Product Number | V20120 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.10.0080 |
| Other Names | V20120SG-E3/4WGI |
| Standard Package | 1,000 |
Diode 120 V 20A Through Hole TO-220-3
