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Vishay General Semiconductor - Diodes Division V3F6-M3/I
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| Parameters | |
|---|---|
| Capacitance @ Vr, F | 310pF @ 4V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | DO-219AB |
| Supplier Device Package | DO-219AB (SMF) |
| Operating Temperature - Junction | -40°C ~ 150°C |
| Base Product Number | V3F6 |
| RoHS Status | ROHS3 Compliant |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.10.0080 |
| Standard Package | 10,000 |
| Mfr | Vishay General Semiconductor - Diodes Division |
| Series | eSMP®, TMBS® |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Technology | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 60 V |
| Current - Average Rectified (Io) | 3A |
| Voltage - Forward (Vf) (Max) @ If | 620 mV @ 3 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Current - Reverse Leakage @ Vr | 600 µA @ 60 V |
Diode 60 V 3A Surface Mount DO-219AB (SMF)
