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Vishay General Semiconductor - Diodes Division VS-1N3766R
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| Parameters | |
|---|---|
| Mfr | Vishay General Semiconductor - Diodes Division |
| Series | - |
| Package | Bulk |
| Product Status | Active |
| Technology | Standard, Reverse Polarity |
| Voltage - DC Reverse (Vr) (Max) | 800 V |
| Current - Average Rectified (Io) | 35A |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 110 A |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Current - Reverse Leakage @ Vr | 4 mA @ 800 V |
| Capacitance @ Vr, F | - |
| Mounting Type | Chassis, Stud Mount |
| Package / Case | DO-203AB, DO-5, Stud |
| Supplier Device Package | DO-203AB (DO-5) |
| Operating Temperature - Junction | -65°C ~ 190°C |
| Base Product Number | 1N3766 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.10.0080 |
| Standard Package | 100 |
Diode 800 V 35A Chassis, Stud Mount DO-203AB (DO-5)
