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Vishay General Semiconductor - Diodes Division VS-31DQ09G
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| Parameters | |
|---|---|
| Mfr | Vishay General Semiconductor - Diodes Division |
| Series | - |
| Package | Bulk |
| Product Status | Obsolete |
| Technology | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 90 V |
| Current - Average Rectified (Io) | 3.3A |
| Voltage - Forward (Vf) (Max) @ If | 850 mV @ 3 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Current - Reverse Leakage @ Vr | 100 µA @ 90 V |
| Capacitance @ Vr, F | 110pF @ 5V, 1MHz |
| Mounting Type | Through Hole |
| Package / Case | DO-201AD, Axial |
| Supplier Device Package | C-16 |
| Operating Temperature - Junction | -40°C ~ 150°C |
| Base Product Number | 31DQ09 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN | EAR99 |
| HTSUS | 8541.10.0080 |
| Other Names | VS31DQ09G |
| Standard Package | 500 |
Diode 90 V 3.3A Through Hole C-16
