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Vishay General Semiconductor - Diodes Division VS-EMG050J60N
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| Parameters | |
|---|---|
| Mfr | Vishay General Semiconductor - Diodes Division |
| Series | - |
| Package | Bulk |
| Product Status | Obsolete |
| IGBT Type | - |
| Configuration | Half Bridge |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector (Ic) (Max) | 88 A |
| Power - Max | 338 W |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 50A |
| Current - Collector Cutoff (Max) | 100 µA |
| Input Capacitance (Cies) @ Vce | 9.5 nF @ 30 V |
| Input | Standard |
| NTC Thermistor | Yes |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | EMIPAK2 |
| Supplier Device Package | EMIPAK2 |
| Base Product Number | EMG050 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Other Names | VSEMG050J60N |
| Standard Package | 56 |
IGBT Module Half Bridge 600 V 88 A 338 W Chassis Mount EMIPAK2
